Silicon Carbide (SiC) Semiconductor Materials and Devices (Discretes & Chips) Market, Global Forecasts & Analysis (2012-2022) -Focus on Wide Band Gap, Compound & Next Generation Power, Opto & High-Temperature Semiconductors
“Silicon Carbide Semiconductors & Electronics” has emerged as a prominent field with respect to technology due to its exceptional advantages over conventional “Silicon-based Semiconductors & Electronics”. SiC material improves the efficiency of a semiconductor device by more than 20% and also facilitates production and usage of devices with much smaller form factor. Advanced features of silicon carbide useful for semiconductors are inherent radiation-resistance, high-temperature operating capacity, high voltage and power handling capacity, high power efficiency and flexibility to be used a substrate. Use of SiC in specifically the industrial, power, solar & wind sector (for power applications) also enables smaller heat sink, passive, and magnetic nature in system designs. SiC electronics also find applications in electric vehicles and hybrid electric vehicles, rail transportation, power supply units, photovoltaic applications, converters & inverters, and many more. Over the next ten years, Silicon Carbide will become a part of mass manufacturing in the Semiconductors & Electronics industry. The other major sectors (other than power semiconductors) where SiC has scope in the semiconductor industry are opto-semiconductors (LEDs, Laser Diodes and Lighting) and high-temperature semiconductors (extreme temperature & rad-hard environment specific).
Silicon Carbide (SiC) has become the choice for most of the next generation power semiconductor devices and high-temperature semiconductor devices and is quickly replacing the existing silicon technology. The various properties of silicon carbide such as wider band gap, larger critical electric field, and higher thermal conductivity let the SiC devices operate at higher temperatures and higher voltages offering higher power density and higher current density than the pure Si devices. These properties allow the SiC discretes such as Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. The SiC devices also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems.
Over the past decade, research was carried out on a massive scale to develop SiC-based discretes (MOSFETs & various types in them, IGBTs, diodes & rectifiers, thyristors, and other FETs) and ICs that have advanced and sophisticated characteristics and offer better flexibility for use in several power applications. With such promising futures, the SiC semiconductor devices market is expected to grow robustly at a high CAGR of 37.67% from 2012 to 2022. The SiC market’s competitive landscape had only a handful of players in the beginning of the previous decade, but it quickly emerged into a vast network with more than forty key players combining both – materials & devices. Currently, the overall SiC power semiconductors market accounts for less than 1% of the total power semiconductors market (currently at $34 billion including power discretes and power ICs), but over the next ten years, the entire base for power semiconductors & electronics players is expected to penetrate this new value chain, thereby rapidly increasing the percentage share. The total SiC semiconductor devices’ market revenue (including power, opto & high-temperature) stands at approximately $218 million in 2012 and is expected to reach $5.34 billion by 2022.
This report defines and segments the global SiC Semiconductor market with analysis and forecasting of the revenues and volumes for the overall market and all its sub segments. This report mainly focuses on three major aspects – the Market Overview (Landscape), the Market Analysis (Dynamics) and the Market Classification (Segmentation). Extensive and detailed classification of the SiC semiconductor devices market is done in this report by technology, products, devices, application and geography. Since the report mainly covers the SiC semiconductor market whose parent market is the global semiconductor market, the report also includes various aspects related to the overall semiconductor industry in several instances throughout the report in various chapters. A comparison of various aspects, of each market segment with its parent market (for example, SiC power semiconductors with overall power semiconductors) is done at every possible level to give an idea about the total addressable markets for each market segment and the market penetrations.
This report is focused on giving a complete bird’s eye-view of the upcoming industry with regards to SiC semiconductor market with highly detailed market segmentations, combined with high level qualitative analysis at each and every aspect of the classifications done by technology, polymer types, substrate technology, technology (process) node, product & device types, applications, and geography. All the numbers, both revenue & volumes, at every level of detail are forecasted till 2022 to give a glimpse of the potential revenue base in the SiC industry and market. The report also gives the market dynamics by identifying the major driving and restraining factors for the global market with analysis of trends, opportunities, winning imperatives, and burning issues along with porter’s five force analysis of the SiC semiconductor devices market.
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